Table 1 The growth parameters and results of the ITO and TiO 2 film deposition on the Si substrate
From: Structural and optical properties of ITO/TiO2 anti-reflective films for solar cell applications
Target | ITO 99.99% | TiO299.99% |
|---|---|---|
Target diameter | 7.6 cm | 7.6 cm |
Distance from substrate | 10 cm | 10 cm |
Substrate | Si | Si |
Substrate temperature | 30°C | 35°C |
Ultimate pressure | 2.68 × 10-5 mbar | 2.97 × 10-5 mbar |
Vacuum (plasma) pressure | 7.41 × 10-3 mbar | 6.75 × 10-3 mbar |
Gas | Ar 99.99% | Ar 99.99% |
RF sputtering power | 200 W | 200 W |
Deposition rate | 2.1 Å · s-1 | 0.5 Å · s-1 |
Deposition time | 5 min | 19 min |
Required thickness | 60 to 64 nm | 55 to 60 nm |
Crystalline size | 0.229 nm | 0.223 nm |
n (λ = 500 nm) | 1.97 | 2.2 |