Figure 4From: Electron beam lithography with feedback using in situ self-developed resistCr pattern created by electron beam lithography with PMMA resist followed by a liftoff process. Wheel array at writing field center (a) and corner (b) exposed without beam optimization by defocus. Wheel array at writing field center (c) and corner (d) exposed with beam optimization using self-developing nitrocellulose resist. The exposure dose increases from the top left to the lower right wheel structure.Back to article page