Table 1 Layer structures of OLED devices A, B, C, and D
Structure | |
---|---|
Device A | ITO (1,800 Ǻ)/NPB (700 Ǻ)/DPVBi (300 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |
Device B | ITO (1,800 Ǻ)/NPB (700 Ǻ)/ADN (300 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Å) |
Device C | ITO (1,800 Ǻ)/NPB (700 Ǻ)/DPASN (300 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |
Device D | ITO (1,800 Ǻ)/NPB (700 Ǻ)/BAlq (300 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |
Device E | ITO (1,800 Ǻ)/NPB (700 Ǻ)/DPVBi (100 Ǻ)/BAlq (100 Ǻ)/DPVBi (100 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |
Device F | ITO (1,800 Ǻ)/NPB (700 Ǻ)/ADN (100 Ǻ)/BAlq (100 Ǻ)/ADN (100 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |
Device G | ITO (1,800 Ǻ)/NPB (700 Ǻ)/DPASN (100 Ǻ)/BAlq (100 Ǻ)/DPASN (100 Ǻ)/Bphen (300 Ǻ)/Liq (20 Ǻ)/Al (1,200 Ǻ) |