Figure 1From: Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperatureCross-sectional images of SiNWs from moderately doped silicon wafer under various concentration of H 2 O 2 . (A,C) 0 and (B,D) 0.03 mol/L. The insets in A and D show the roots images of SiNWs.Back to article page