Figure 2From: Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperatureTEM images of SiNWs from moderately doped silicon wafer under various concentration of H 2 O 2 . (A) is the root of SiNWs prepared under etchant with 0 mol/L H2O2; the inset is the top of SiNWs. (B) is prepared under etchant with 0.03 mol/L H2O2; the inset shows the SAED pattern.Back to article page