Figure 7
From: Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature
Schematic illustration of the formation process of PSiNWs through MACE method in HF/H 2 O 2 /AgNO 3 system. (A) Ag nanoparticles deposit on silicon surface at the beginning. (B) SiNWs grow with the migration of Ag particle, and some Ag+ ions renucleate throughout the nanowires. (C) Numerous perpendicular pore channel form with the migration of renucleated Ag particle. (D) Porous structure can be obtained with the removal of Ag0.