Figure 2From: Bismuth incorporation and the role of ordering in GaAsBi/GaAs structuresCompositional distribution in the GaAsBi layers. HAADF images taken along the [110] pole of samples (a) S100 and (b) S25. The normalized HAADF intensity profiles (c) and point EDX measurements (d) performed along the growth direction of both samples, respectively.Back to article page