Figure 4
From: Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
Degree of ordering in sample S100. (a) Cross-sectional HRTEM image taken along [110] at the lower interface of sample S100. The dashed line marks the interface between GaAs (below) and GaAsBi (above). (b,c) depict the FFT of (a) corresponding to GaAsBi area and GaAs, respectively. (d) The Bragg-Williams long-range order parameter (S) estimated along the layer of sample S100. The dashed circle mark the corresponding Bragg mask used to obtain the numerical moiré fringe maps of Figure 5.