Figure 5
From: Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask
Variation of fabrication depth of Si/Si 3 N 4 sample with etching period in KOH solution. Before KOH solution etching, the sample was scratched under Fn of 4 mN and then etched in HF solution for 30 min.