Table 1 Parameters of each layer for calculations
Parameters | n-type poly-Si | Si-QD | a-Si1 - x- yC x O y | p-type a-Si |
|---|---|---|---|---|
Energy gap (eV) | 1.13 | 1.13 | 2.5 | 1.7 |
Electron affinity (eV) | 4.17 | 4.17 | 3.5 | 4.0 |
Carrier lifetime (s) | 1 × 10-15 | 1 × 10-10 | 1 × 10-10 | 1 × 10-6 |
Electron mobility (cm2/Vs) | 1 | 1 | 1 | 1 |
Hole mobility (cm2/Vs) | 0.1 | 0.1 | 0.1 | 0.1 |
Donor concentration (cm-3) | 1 × 1019 | 0 or 1 × 1017 | - | - |
Accepter concentration (cm-3) | - | - | - | 1 × 1019 |