Cu2ZnSnSe4 nanocrystals capped with S2− by ligand exchange: utilizing energy level alignment for efficiently reducing carrier rec ombination
© Wang et al.; licensee Springer. 2014
Received: 13 March 2014
Accepted: 8 May 2014
Published: 24 May 2014
In this work, we employed a convenient one-step synthesis method for synthesizing Cu2ZnSnSe4 (CZTSe) nanocrystals (NCs) in an excess selenium environment. This excess selenium situation enhanced the reaction of metal acetylacetonates with selenium, resulting in the burst nucleation of NCs at relatively low temperatures. The phase morphology and surface and optoelectronic properties of NCs before and after ligand exchange were discussed in depth. It was found that pure tetragonal-phase structure CZTSe NCs with approximately 1.7-eV bandgap could be synthesized. The removal of large organic molecules on CZTSe NCs after ligand exchange by S2− decreased the resistivity. The bandgap of the films after ligand exchange by 550°C selenization was also decreased due to better crystallinity. For potential application in CZTSe solar cells, we constructed an energy level diagram to explain the mutual effect between the absorption layer and CdS layer. Using cyclic voltammetry (CV) measurement, we found that the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of CZTSe films shifted down after ligand exchange. After energy level alignment at the CdS/CZTSe interface, a type I band alignment structure was more conveniently formed after ligand exchange. This structure acted as the barrier against injection electrons from ZnO to the CZTSe layer, and recombination would subsequently be depressed.
Currently, nontoxic and earth-abundant I2-II-IV-VI4 quaternary compounds such as Cu2ZnSnS4 and Cu2ZnSnSe4 (CZTSe) have been considered as the most promising ‘next-generation’ photovoltaic materials to substitute for CIGSe absorber materials, due to their excellent properties such as high absorption coefficients (1 × 105 cm−1) [1–3], suitable absorption bandgap for the solar spectrum, high radiation stability, and considerable cell efficiency [4–6]. Various methods have been used for the preparation of CZTSe materials, including physical methods [7–10] and wet chemical routes [11–15]. Wet chemical routes are more prevalent due to their convenient operability, achievable by using traditional instruments, and low cost. CZTSe nanocrystals (NCs) are usually covered with long alkyl chain ligands to shield the surface of the NC, which can realize homogeneous nucleation and enable easy solution processibility for fabrication. However, these ligands also act as an insulating layer that impedes efficient charge transfer and the dissociation of photogenerated excitons and lead to poor conductivity, limiting NC application in electronic and photoelectronic devices [16–18]. Many results had been recently published regarding the development of new ligand strategies to minimize interparticle spacing. Zhang et al. reported that optical absorption of NCs could be effectively improved after ligand removal . Lauth et al. reported that 3 orders of magnitude conductivity increase of CIGS NC films could be achieved after ligand removal and conductivity enhancement depends on the NC size accentuating the role of trap states and internal grain boundaries in ligand-free NC solids for electrical transport . Carrete et al. and Stolle et al. performed ligand exchange on CZTSe nanoparticles, finding that crystallization of NCs and cell performances could be promoted [21, 22]. Their works focused on improving the optical and electrical properties of CZTSe films to increase the photocurrent of the device, but there is no detailed study clarifying the band alignment between the CdS layer and the absorption layer after ligand exchange.
Herein, we employed a convenient one-step method to synthesize CZTSe NCs. The key feature of this synthesis was to use excess Se relative to Cu, Zn, and Sn and conduct the reaction at a relatively low temperature. All-inorganic CZTSe NCs were obtained by ligand exchange strategy using a simple metal-free chalcogenide compound [(NH4)2S] as the inorganic ligand. We showed the energy level movement of CZTSe films before and after ligand exchange. Using cyclic voltammetry (CV) measurements, we found that the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of CZTSe films shifted down after ligand exchange. Utilizing energy level alignment at the CdS/CZTSe interface, we constructed an energy level diagram to explain the physical mechanism of reducing recombination in CZTSe solar cells. This provides a different approach to the design of the absorption layer, which is generally not afforded by previous reports applying interface passivation and the control of trap states, focuses on the problem of recombination, and holds for a more convenient way to optimize interface properties.
Cupric(II) acetylacetonate [Cu(acac)2], zinc(II) acetylacetonate [Zn(acac)2], tin(IV) chloride tetrahydrate (SnCl4 · 4H2O), 2,4-pentanedione, triethylamine, perchlorethylene 1-dodecanethiol (DDT), and oleylamine (OLA) were purchased from Alfa Aesar (Ward Hill, MA, USA). Tetrabutylammonium hexafluorophosphate (TBAPF6) and sodium hydroxide (NaOH) were purchased from Aldrich (St. Louis, MO, USA). Toluene, N,N-dimethylformamide (DMF), and ethanol are of analytical grade. All water used was obtained from a Millipore Milli-Q purification system (Darmstadt, Germany). The chemicals were used in an as-received condition without further purification.
For the synthesis of Sn(acac)4, 20 mmol SnCl4 · 4H2O was dissolved in 15 ml deionized water. Under magnetic stirring, 90 mmol of 2,4-pentanedione (9 ml) was added and kept stirred for another 15 min. Then Sn(acac)4 was precipitated by the addition of triethylamine (6 ml). The resulting Sn(acac)4 was washed for several times by ethanol and water, then dried in the vacuum.
A typical synthetic procedure of CTZSe NCs is briefly described as follows: 1 ml OLA, 1 ml DT, and 2 mmol Se powder were placed in a three-neck flask and stirred to dissolve the Se powder. Once the Se powder was completely dissolved, 0.5 mmol Cu(acac)2, 0.25 mmol Zn(acac)2, 0.25 mmol Sn(acac)4, 1 ml DT, and 10 ml OLA were added under vigorous stirring. Then the mixture was placed in an oil bath at 240°C and maintained for 0.5 h. After that, the flask was rapidly cooled to room temperature, and the as-synthesized NCs were separated by precipitation with ethanol and collected by centrifugation at 9,500 rpm for 4 min. The supernatant was decanted. The precipitates were dispersed in hexane and further purified by ethanol for several times. The precipitates were dried under vacuum at room temperature.
The ligand exchange process was carried out according to the literature with some modification . Colloidal dispersion of CZTSe NCs with organic ligand was prepared in toluene, while the solution of CZTSe NCs with inorganic ligand was prepared in polar formamide (FA) immiscible with toluene. For a typical ligand exchange, 20 mg CZTSe NCs was dispersed into 3 ml toluene and 0.1 ml (NH4)2S was dissolved into 3 ml FA. Then the (NH4)2S solution in FA was mixed with the CZTSe NC dispersion in toluene. The mixture was stirred for about 10 min leading to a complete phase transfer of CZTSe NCs from toluene to the FA phase. The phase transfer can be easily monitored by the color change of toluene (black to colorless) and FA (yellow to black) phases. The FA phase was separated out followed by triple washing with toluene to remove any remaining nonpolar organic species.
The morphology of CZTSe NCs was characterized by transmission electron microscopy (TEM; JSM-2010, JEOL Ltd., Akishima-shi, Japan). The phase and crystallographic structure of the products were identified by X-ray diffraction (XRD; X'Pert Pro, Philips, Amsterdam, The Netherlands). The UV-visible (UV-vis) absorption spectra were obtained by using a UV-vis spectrometer (Lambda 35, PerkinElmer, Waltham, MA, USA). Fourier transform infrared (FTIR) spectra were recorded on a Nicolet 360 FTIR spectrometer (Thermo Fisher Scientific, Inc., Waltham, MA, USA) using KBr pellets in the range of 4,000 of 400 cm−1. The Raman spectrum was recorded using a LABRAM-1B confocal laser micro-Raman spectrometer (HORIBA, Kyoto, Japan) with the wavelength of 632.8 nm. The resistivity was tested by the four-probe method on a digital source meter (Keithley 2400, Keithley Instruments, Inc., Cleveland, OH, USA). Mott-Schottky plots and CV curves were measured by using an electrochemical test station (Novocontrol Technologies, Montabaur, Germany).
Results and discussion
The successful synthesis of high-quality monodisperse quantum dots (QDs) must start with a swift and short nucleation from supersaturated reactants, followed by growth without further nucleation [24, 25]. In this study, this excess selenium situation significantly enhanced the reaction of the metal acetylacetonates [Cu(acac)2, Zn(acac)2, and Sn(acac)4] with selenium, resulting in a short nucleation stage. This synthetic tactic is advantageous over the typical hot-injection synthesis , which requires a relatively high injection temperature (usually above 250°C) to generate burst nucleation.
Figure 1c shows a high-resolution transmission electron micrograph (HRTEM) of CZTSe NCs. The average size of CZTSe NCs is about 3 nm. CZTSe NCs have better dispersibility. Figure 1d shows the UV-vis absorption spectrum of CZTSe NCs and the corresponding bandgap of CZTSe NCs. The bandgap of CZTSe NCs was estimated to be 1.76 eV by extrapolating the linear region of a plot of the squared absorbance versus the photon energy. This is mainly attributed to the small size and quantum confinement effect of CTZSe NCs .
Herein, Raman spectroscopy was further employed for phase analysis, as shown in Figure 3b. Because (NH4)2S is used during ligand exchange, the CZTSe nanocrystal thin film shows one weak peak of Cu2ZnSnS4 at around 333 cm−1 after ligand exchange. There are no characteristic peaks of other impurities detected. CZTSe thin films prepared by selenization shows three peaks of CZTSe with Raman shift at 172, 192, and 232 cm−1, in agreement with previous reports . These results further confirmed that the ligand exchange did not change the structure of CZTSe NCs. There are no observable secondary phases such as Cu2Se, SnSe, and Cu2SnSe3. The intensity of the Raman peaks increased largely after annealing due to the recrystallization of CZTSe NCs.
Energy level and resistivity of CZTSe NC thin films before and after ligand exchange by 550°C selenization
Before exchange (550°C)
After exchange (550°C)
where ϵ is the relative permittivity (dielectric constant) of the CZTSe films, ϵ0 is the vacuum permittivity, e is the elementary charge of an electron, ND is the donor density in CZTSe films, Efb is the flat-band potential, k is the Boltzmann constant, and T is the temperature; the carrier concentration is inversely proportional to the slope of 1/C−2 vs. E. It can be seen that the slope of CZTSe films after ligand exchange is smaller than that before ligand exchange, indicating that the carrier concentration increases after ligand exchange and the conductivity of CZTSe NC thin films would be improved.
Figure 5b shows the individual energy level of ZnO, CdS, and the absorption layer used for CZTSe solar cells. The HOMO-LUMO levels of the absorption layer by selenization before and after ligand exchange listed in Table 1 are determined from the onset oxidation and reduction potentials according to Equations 2 and 3. It can be seen that the HOMO and LUMO energy levels of the CZTSe layer shift downwards after ligand exchange. If CZTSe solar cells are structured, CZTSe, CdS, and ZnO are in close contact with each other to form a heterojunction. The carrier will transfer between these semiconductors until the three kinds of materials form the unified Fermi level and the heterojunction is in thermal equilibrium state. After ligand exchange, the conduction band of the CdS layer is above that of the CZTSe layer, which is in accordance with the real condition of the CZTSe solar cell. A type I band alignment is more conveniently formed at the CdS/CZTSe interface. This structure acts as the barrier against injection electrons from ZnO to the CZTSe layer, and recombination between majority carriers is not formed . Meanwhile, this structure acts as the barrier against photogenerated electrons in CZTSe, too. Photogenerated electrons cannot cross over the barrier if the height of this barrier at the CdS/CZTSe interface becomes over 0.4 eV. The height should be modestly controlled to keep Jsc constant . However, before ligand exchange, the conduction band of the CdS layer is below that of the CZTSe layer and a type II band alignment is formed at the CdS/CZTSe interface. This structure will cause recombination between majority carriers at the interface, and the entire recombination increases with increasing absolute value of conduction band difference between CdS and CZTSe layer . As a result, the open circuit voltage of the CZTSe solar cell will become higher after ligand exchange due to the type I band alignment structure and the depression of recombination.
In conclusion, we synthesized pure tetragonal-phase structure CZTSe NCs with the size of about 3 nm by a facile one-step synthesis. For potential application in CZTSe solar cells, the physical mechanism of utilizing energy level alignment for reducing recombination was discussed in depth after ligand exchange. It was found that the removal of large organic molecules on CZTSe NCs after ligand exchange by S2− decreased the resistivity. The bandgap of the films after ligand exchange by 550°C selenization was also decreased due to better crystallinity. HOMO and LUMO energy levels of CZTSe films both shifted down after ligand exchange, and a type I band alignment structure was more conveniently formed at the CdS/absorption layer interface in CZTSe solar cells. This structure acts as the barrier against injection electrons from ZnO to the CZTSe layer, and recombination will subsequently be depressed. Overall, the cell efficiencies relatively depend on the energy level alignment and ligand exchange will make great contribution in this aspect.
This project is supported by the National Natural Science Foundation of China (21203053, 21271064, and 61306016), the Joint Talent Cultivation Funds of NSFC-HN (U1204214), the New Century Excellent Talents in University (NCET-08-0659), the Program for Changjiang Scholars and Innovative Research Team in University (PCS IRT1126), the Natural Science Foundation of Shandong Province (ZR2011BQ011), and the Scientific Research Foundation of Henan University (SBGJ090510 and B2010079).
- Shavel A, Arbiol J, Cabot A: Synthesis of quaternary chalcogenide nanocrystals: stannite Cu2ZnxSnySe1+x+2y. J Am Chem Soc 2010, 132: 4514–4515. 10.1021/ja909498cView ArticleGoogle Scholar
- Chen SY, Gong XG, Walsh A, Wei SH: Crystal and electronic band structure of Cu2ZnSnX4(X = S and Se) photovoltaic absorbers: first-principles insights. Appl Phys Lett 2009, 94: 041903. 10.1063/1.3074499View ArticleGoogle Scholar
- Shi L, Pei CJ, Li Q, Xu YM: Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4. J Am Chem Soc 2011, 133: 10328–10331. 10.1021/ja201740wView ArticleGoogle Scholar
- Yen YT, Lin YK, Chang SH, Hong HF, Tuan HY, Chueh YL: Investigation of bulk hybrid heterojunction solar cells based on Cu(In, Ga)Se2 nanocrystals. Nanoscale Res Lett 2013, 8: 329. 10.1186/1556-276X-8-329View ArticleGoogle Scholar
- Liou JC, Diao CC, Lin JJ, Chen YL, Yang CF: Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors. Nanoscale Res Lett 2014, 9: 1. 10.1186/1556-276X-9-1View ArticleGoogle Scholar
- Zhou ZH, Wang YY, Xu D, Zhang YF: Fabrication of Cu2ZnSnS4 screen printed layers for solar cells. Sol Energy Mater Sol Cells 2010, 94: 2042–2045. 10.1016/j.solmat.2010.06.010View ArticleGoogle Scholar
- Wibowo RA, Lee ES, Munir B, Kim KH: Pulsed laser deposition of quaternary Cu2ZnSnSe4 thin films. Phys Stat Sol A 2007, 204: 3373–3379. 10.1002/pssa.200723144View ArticleGoogle Scholar
- Salome PMP, Fernandes PA, da Cunha AF, Leit JP, Malaquias J, Weber A: Growth pressure dependence of Cu2ZnSnSe4 properties. Sol Energy Mater Sol Cells 2010, 94: 2176–2180. 10.1016/j.solmat.2010.07.008View ArticleGoogle Scholar
- Volobujeva O, Raudoja J, Mellikov E, Grossberg M, Bereznev S, Traksmaa R: Cu2ZnSnSe4 films by selenization of Sn-Zn-Cu sequential films. J Phys Chem Solids 2009, 70: 567–570. 10.1016/j.jpcs.2008.12.010View ArticleGoogle Scholar
- Kim GY, Kim JR, Jo W, Son DH, Kim DH, Kang JK: Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S, Se)4 thin films grown by sputtering-based two-step process. Nanoscale Res Lett 2014, 9: 10. 10.1186/1556-276X-9-10View ArticleGoogle Scholar
- Wang G, Zhao WG, Cui Y, Tian QW, Gao S, Huang LJ, Pan DC: Fabrication of a Cu2ZnSn(S, Se)4 photovoltaic device by a low-toxicity ethanol solution process. ACS Appl Mater Interfaces 2013, 5: 10042–10047. 10.1021/am402558aView ArticleGoogle Scholar
- Haas W, Rath T, Pein A, Rattenberger J, Trimmel G, Hofer F: The stoichiometry of single nanoparticles of copper zinc tin selenide. Chem Commun 2011, 47: 2050–2052. 10.1039/c0cc04397dView ArticleGoogle Scholar
- Barkhouse DAR, Gunawan O, Gokmen T, Todorov TK, Mitzi DB: Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se, S)4 solar cell. Prog Photovol Res Appl 2012, 20: 6–11. 10.1002/pip.1160View ArticleGoogle Scholar
- Du YF, Fan JQ, Zhou WH, Zhou WH, Jiao J, Wu SX: One-step synthesis of stoichiometric Cu2ZnSnSe4 as counter electrode for dye-sensitized solar cells. ACS Appl Mater Interfaces 2012, 4: 1796–1802. 10.1021/am3000616View ArticleGoogle Scholar
- Liu Y, Yao D, Shen L, Zhang H, Zhang XD, Yang B: Alkylthiol-enabled Se powder dissolution in oleylamine at room temperature for the phosphine-free synthesis of copper-based quaternary selenide nanocrystals. J Am Chem Soc 2012, 134: 7207–7210. 10.1021/ja300064tView ArticleGoogle Scholar
- Kovalenko MV, Scheele M, Talapin DV: Colloidal nanocrystals with molecular metal chalcogenide surface ligands. Science 2009, 324: 1417–1420. 10.1126/science.1170524View ArticleGoogle Scholar
- Lee JS, Kovalenko MV, Huang J, Chung DS, Talapin DV: Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays. Nat Nanotechnol 2011, 6: 348–352. 10.1038/nnano.2011.46View ArticleGoogle Scholar
- Hu X, Zhang QX, Huang XM, Li DM, Luo YH, Meng QB: Aqueous colloidal CuInS2 for quantum dot sensitized solar cells. J Mater Chem 2011, 21: 15903–15905. 10.1039/c1jm12629fView ArticleGoogle Scholar
- Zhang HT, Hu B, Sun LF, Hovden R, Wise FW, Muller DA, Robinson RD: Surfactant ligand removal and rational fabrication of inorganically connected quantum dots. Nano Lett 2011, 11: 5356–5361. 10.1021/nl202892pView ArticleGoogle Scholar
- Lauth J, Marbach J, Meyer A, Dogan S, Klinke C, Kornowski A, Weller H: Virtually bare nanocrystal surfaces: significantly enhanced electrical transport in CuInSe2 and CuIn1-xGaxSe2 thin films upon ligand exchange with thermally degradable 1-ethyl-5-thiotetrazole. Adv Funct Mater 2014, 24: 1081–1088. 10.1002/adfm.201301957View ArticleGoogle Scholar
- Carrete A, Shavel A, Fontané X, Montserrat J, Fan JD, Ibáñez M, Saucedo E, Pérez-Rodríguez A, Cabot A: Antimony-based ligand exchange to promote crystallization in spray-deposited Cu2ZnSnSe4 solar cells. J Am Chem Soc 2013, 135: 15982–15985. 10.1021/ja4068639View ArticleGoogle Scholar
- Stolle CJ, Panthani MG, Harvey TB, Akhavan VA, Korgel BA: Comparison of the photovoltaic response of oleylamine and inorganic ligand-capped CuInSe2 nanocrystals. ACS Appl Mater Interfaces 2012, 4: 2757–2761. 10.1021/am3003846View ArticleGoogle Scholar
- Nag A, Kovalenko MV, Lee JS, Liu W, Spokoyny B, Talapin DV: Metal-free inorganic ligands for colloidal nanocrystals: S2−, HS−, Se2−, HSe−, Te2−, HTe−, TeS32−, OH−, and NH2− as surface ligands. J Am Chem Soc 2011, 133: 10612–10620. 10.1021/ja2029415View ArticleGoogle Scholar
- Park J, Joo J, Kwon SG, Jang YJ, Hyeon T: Synthesis of monodisperse spherical nanocrystals. Angew Chem Int Ed 2007, 46: 4630–4660. 10.1002/anie.200603148View ArticleGoogle Scholar
- Li TL, Teng H: Solution synthesis of high-quality CuInS2 quantum dots as sensitizers for TiO2 photoelectrodes. J Mater Chem 2010, 20: 3656–3664. 10.1039/b927279hView ArticleGoogle Scholar
- Cheng AJ, Manno M, Khare A, Leighton C, Capmbell SA, Aydil ES: Imaging and phase identification of Cu2ZnSnS4 thin films using confocal Raman spectroscopy. J Vac Sci Technol A 2011, 29: 051203.View ArticleGoogle Scholar
- Liu WC, Guo BL, Wu XS, Zhang FM, Mak CL, Wong KH: Facile hydrothermal synthesis of hydrotropic Cu2ZnSnS4 nanocrystal quantum dots: band-gap engineering and phonon confinement effect. J Mater Chem A 2013, 1: 3182–3186. 10.1039/c3ta00357dView ArticleGoogle Scholar
- Khare A, Wills AW, Ammerman LM, Norris DJ, Aydil ES: Size control and quantum confinement in Cu2ZnSnS4 nanocrystals. Chem Commun 2011, 47: 11721–11723. 10.1039/c1cc14687dView ArticleGoogle Scholar
- Craciun V, Elders J, Gardeniers JGE, Boyd Ian W: Characteristics of high quality ZnO thin films deposited by pulsed laser deposition. Appl Phys Lett 1994, 65: 2963–2965. 10.1063/1.112478View ArticleGoogle Scholar
- Ahn S, Jung S, Gwak J, Cho A, Shin K, Yoon K, Park D, Cheong H, Yun JH: Determination of band gap energy (Eg) of CZTSe thin films: on the discrepancies of reported band gap values. Appl Phys Lett 2010, 97: 021905. 10.1063/1.3457172View ArticleGoogle Scholar
- Metikoš-Hukocić M, Grubač Z, Omanovic S: Change of n-type to p-type conductivity of the semiconductor passive film on N-steel: enhancement of the pitting corrosion resistance. J Serb Chem Soc 2013, 78: 2053–2067. 10.2298/JSC131121144MView ArticleGoogle Scholar
- Herraiz-Cardonaa I, Fabregat-Santiagoa F, Renaudb A, Julián-Lópezd B, Odobela F, Carioc L, Jobicc S, Giménez S: Hole conductivity and acceptor density of p-type CuGaO2 nanoparticles determined by impedance spectroscopy: the effect of Mg doping. Electrochim Acta 2013, 113: 570–574.View ArticleGoogle Scholar
- Kucur E, Riegler J, Urban GA, Nann T: Determination of quantum confinement in CdSe nanocrystals by cyclic voltammetry. J Chem Phys 2003, 119: 2333–2337. 10.1063/1.1582834View ArticleGoogle Scholar
- Haram SK, Quinn BM, Bard AJ: Electrochemistry of CdS nanoparticles: a correlation between optical and electrochemical band gaps. J Am Chem Soc 2001, 123: 8860–8861. 10.1021/ja0158206View ArticleGoogle Scholar
- Bae Y, Myung N, Bard AJ: Electrochemistry and electrogenerated chemiluminescence of CdTe nanoparticles. Nano Lett 2004, 4: 1153–1161. 10.1021/nl049516xView ArticleGoogle Scholar
- Poznyak SK, Osipovich NP, Shavel A, Talapin DV, Gao M, Eychmuller A, Gaponik N: Size-dependent electrochemical behavior of thiol-capped CdTe nanocrystals in aqueous solution. J Phys Chem B 2005, 109: 1094–1100.View ArticleGoogle Scholar
- Sun QJ, Wang HQ, Yang CH, Li YF: Synthesis and electroluminescence of novel copolymers containing crown ether spacers. J Mater Chem 2003, 13: 800–806. 10.1039/b209469jView ArticleGoogle Scholar
- Li YC, Zhong HZ, Li R, Zhou Y, Yang CH, Li YF: High-yield fabrication and electrochemical characterization of tetrapodal CdSe, CdTe, and CdSexTe1-x nanocrystals. Adv Funct Mater 2006, 16: 1705–1716. 10.1002/adfm.200500678View ArticleGoogle Scholar
- Bao DH, Yao X, Wakiya N, Shinozaki K, Mizutani N: Band-gap energies of sol–gel-derived SrTiO3 thin films. Appl Phys Lett 2001, 79: 3767–3769. 10.1063/1.1423788View ArticleGoogle Scholar
- Minemoto T, Matsui T, Takakura H, Hamakawa Y, Negami T, Hashimoto Y, Uenoyama T, Kitagawa M: Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation. Sol Energy Mater Sol Cells 2001, 67: 83–88. 10.1016/S0927-0248(00)00266-XView ArticleGoogle Scholar
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