Table 1 Energy level and resistivity of CZTSe NC thin films before and after ligand exchange by 550°C selenization
Samples | ρ(Ω cm) | ELUMO(eV) | EHOMO(eV) | Egap(eV)a |
---|---|---|---|---|
Before exchange (550°C) | 3.09 | −3.95 | −5.57 | 1.62 |
After exchange (550°C) | 0.17 | −4.37 | −5.91 | 1.54 |