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Table 1 Energy level and resistivity of CZTSe NC thin films before and after ligand exchange by 550°C selenization

From: Cu2ZnSnSe4 nanocrystals capped with S2− by ligand exchange: utilizing energy level alignment for efficiently reducing carrier rec ombination

Samples

ρ(Ω cm)

ELUMO(eV)

EHOMO(eV)

Egap(eV)a

Before exchange (550°C)

3.09

−3.95

−5.57

1.62

After exchange (550°C)

0.17

−4.37

−5.91

1.54

  1. aDetermined by CV, |E'ox − E'red|.

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