Table 1 Comparison of main device characteristics for RRAM devices with rectifying property

Pt/TiO _x /Pt [8]

Pt/TiO _x /Pt

~10² @ 1 V

~4.5 V

~2

<10² @ ±0.5

Pt/NiO/Pt [10]

Pt/p-NiO _x /n-TiO _x /Pt

~10³

~ −3

10⁵ @ ±3

Pt/WO₃/a-Si/Cu [15]

Self-rectified

~10² @ 1 V

~1 V

~ −1.5

10² @ ±1

Pt/A1/PCMO/Pt [16]

Self-rectified

10 @ 1 V

10 @ 4

NiSi/HfO _x /TiN [24]

Self-rectified

>10³

~1.8

>10³ @ ±1

This work TaN/ZrTiO _x /Ni

Ni/n⁺-Si

~2,300 @ 0.1 V

~0.75 V

~ −1

~10³ @ ±0.2