Figure 2
From: Thermally controlled widening of droplet etched nanoholes
GaAs surfaces after Ga-LDE at temperatures above the GaAs congruent evaporation temperature. The Ga droplet material coverage is 2.0 ML and the annealing time ta= 120 s. (a) AFM images of LDE nanoholes for etching at T = 630℃. (b) AFM images of LDE nanoholes for etching at T = 650℃. (c) Linescans of a nanohole from (b). (d) Average hole density N, diameter and depth as function of the process temperature. The hole diameter is taken at the plane of the flat surface, and the hole depth is defined as the distance between the flat surface plane and the deepest point of the hole.