Figure 2
From: Crossbar nanoarchitectonics of the crosslinked self-assembled monolayer
Preparation of the cross-linked BPD-Ni2+SAM. (a) Preparation of the BPD SAM. (b) Encapsulation of Ni on the BPD SAM. (c) A BPD-Ni system was employed as a negative resist for e-beam lithography. Microscope image of etched BPD-Ni/Au template, preliminary patterned by electrons in proximity printing geometry using a metal mesh as mask. Areas exposed and non-exposed to electrons are marked.