Figure 2
From: Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure
Current-voltage and resistance-voltage switching characteristics with different device sizes. Current-voltage and corresponding resistance-voltage characteristics of the W/TaO x /TiN memory devices with different device sizes of (a) 4 × 4 and (b) 0.6 × 0.6 μm2. The memory device performs 100 consecutive cycles of self-compliance bipolar resistive switching under a small operating voltage of ±2.5 V. Repeatable switching cycles are observed. The voltage-sweeping directions are shown by arrows 1 to 4.