Table 2 Thickness evolution of the thin films obtained by ISS process after thermal treatment
Fabrication process | Temperature | Thickness (nm) | LSPR (λmax; Amax) |
---|---|---|---|
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycle | Ambient | 294 ± 8 | 424.6 nm; 1.07 |
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles | 50°C | 277 ± 9 | 424.6 nm; 1.10 |
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles | 100°C | 256 ± 7 | 424.6 nm; 1.16 |
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles | 150°C | 212 ± 7 | 436.8 nm; 1.63 |
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles | 200°C | 194 ± 7 | 477.1 nm; 1.57 |