Account

Table 1 Summary of physical parameters of the nc-Si:H thin films prepared under various hydrogen dilution ratios

From: Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

R_H(%)	R_d(Å/s)	d(nm)	X_C(%)	n _∞	C_O(at.%)	C_H(at.%)
97.5	0.2895	8.6	76.83	2.980	5.73	34.19
98.0	0.2583	7.3	75.41	2.768	8.39	33.90
98.2	0.2540	6.3	73.15	2.744	8.80	32.46
98.6	0.1966	5.8	72.07	2.663	10.92	33.98
98.8	0.1830	5.5	74.69	2.650	9.34	33.66
99.2	0.1778	6.1	75.72	2.541	3.33	30.63

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