Figure 3From: Controlling the Er content of porous silicon using the doping current intensityVoltage evolution in PSi Er doping using a high constant current intensity. The presence of a double transient is evident. In the inset, the first derivative of the curve (blue dotted line, right axis) is shown superposed to the original curve (red dotted line, left axis) to highlight the slope change induced by the presence of the double transient.Back to article page