Figure 4From: Controlling the Er content of porous silicon using the doping current intensityComparison between fitted circuit models and measured Nyquist data obtained during doping at low (a) and high (b) current intensities. The equivalent circuit adopted is also shown as inset. Experimental data are the 4th and 3rd GEIS cycles of FiguresĀ 5a and 6b, respectively.Back to article page