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Table 1 EDS-SEM measurements of Er content

From: Controlling the Er content of porous silicon using the doping current intensity

Depth (μm) Er (At%) at I = +0.5 mA Er (At%) at I = +0.05 mA
2 1.24 0.12
6 1.29 0.09
9 1.22 0.21
13 1.14 0.23
17 0.91 0.21
22 0.11 0.02
  1. Er content (At%) for two PSi samples doped using two one order of magnitude-different doping currents. The samples were 20-μm thick, and the last point at 22-μm depth has been measured in the bulk Si region as reference for background signal.