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Figure 3 | Nanoscale Research Letters

Figure 3

From: Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth

Figure 3

XRD profiles of the as-etched and the annealed, 1,300-nm-thick, low-porosity monolayer of PSi. XRD profiles combined with the cross-sectional SEM image of the as-etched ( a ) and annealed ( b ) monolayer of PSi, 1300-nm-thick, displaying two clear peaks corresponding to the Si substrate and the PSi layer, on top of a broad hump (D). Upon annealing, the PSi peak shifts from lower to higher angle relative to the Si-peak, indicating a change in the out-of-plane strain from tensile to compressive.

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