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Figure 10 | Nanoscale Research Letters

Figure 10

From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

Figure 10

FE simulations. (a) Total elastic energy of wires and dots as a function of the Si content. (b) Three-dimensional maps of biaxial strain for pyramidal dots and wires for a Si content of 10%. (c) Average biaxial strain for wires and dots as a function of the Si content. (d) Total strain + surface energy for wires and dots as a function of volume. (e) Relative difference of the curves shown in (d).

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