Figure 3From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowiresTEM microscopy. Cross-sectional TEM images showing: (a) a pit and (b) Ge wires grown inside a polishing-induced trench. The topmost black layer is the protective Pt film deposited for FIB cross-sectioning.Back to article page