Figure 4From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowiresSTM imaging. STM images of (a, b, c, d) the reconstructed Ge(001) surface and (e , f , g) the polishing-induced trenches. The size of panels (b) and (c) is, respectively, 31 × 31 nm2 and 18 × 18 nm2. In (h), the line profile of the trench reported in (g) is shown.Back to article page