Figure 7From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowiresWire to dot transition. (a , b , c , d , e) STM images showing different stages of the wire-to-dot shape transition induced by Si deposition. The total Si content, obtained by Raman spectroscopy, is 10%.Back to article page