Figure 9From: Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowiresRaman spectroscopy. (a) Raman spectra of bare Ge(001) substrate, Ge wires, and SiGe islands formed from the wires with Si deposition. (b) Spectra extracted from the Raman image shown in (c). (c) Raman image. The color scale gives the intensity of the SiGe alloy peak at 399 cm-1. The markers highlight the position of the spectra reported in (b). (d) Composition image obtained from (c) by applying the relative-intensity method described in the text.Back to article page