Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

Table 1 Morphological parameters of wires and dots

	Total volume [measured on a 4 × 4 μm²image] (nm³)	Average height (nm)	Average lateral size^a(nm)	Surface (S) to volume (V) ratioS/V^2/3
Wires	(2.0 ± 0.5) × 10⁷	18 ± 5	100 ± 10	10.3
Dots	(1.8 ± 0.5) × 10⁷	40 ± 5^b	230 ± 10^b	5.5
		15 ± 5	130 ± 10

^aThe width of the wires and the island edge size is reported. ^bDots show a bimodal distribution.