Figure 5From: Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layerPL spectra at 15 K for GaAsSb, GaAsN, and GaAsSbN QWs grown at 1 and 2 ML s−1. The spectra corresponding to different materials are shifted in the vertical axis for the sake of clarity. Arrows indicate the respective blueshifts induced by the increased growth rate.Back to article page