Figure 3From: Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memoryDepth profile and bonding energy change. (a) Depth profile of the selector-less ReRAM. (b, c, d) Bonding energy change in the TiOx top surface with thermal oxidation time (0-, 5-, and 10-min oxidation). Ti4+ peak increased with increasing thermal oxidation time.Back to article page