Figure 2From: Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureSchematic view of via-hole device and OM image. (a) Schematic view of the Cu pillar formation and memory characteristics of an Al/Cu/Al2O3/TiN structure. (b) Optical image (OM) of a typical 4 × 4 μm2 device. The ‘V4.0’ as indicated on OM image is via size of 4 × 4 μm2.Back to article page