Figure 4From: Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureCurrent–voltage (I-V) characteristics and statistical distribution. (a) Current–voltage (I-V) characteristics of randomly measured 100 devices at a high CC of 70 mA. Statistical distribution of (b) forming voltage, (c) current levels at IRL and LRS for the Al/Cu/Al2O3/TiN CBRAM devices.Back to article page