Figure 5From: Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureI-V characteristics and conduction mechanism. (a) Bipolar resistive switching characteristics of the Al/Cu/Al2O3/TiN memory device at a CC of 500 μA under small operating voltage of ±1 V is observed. (b) To identify the current conduction mechanism, I-V curves are fitted in log-log scale. Both HRS and LRS show ohmic current conduction behavior.Back to article page