Figure 7From: Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureData retention and read endurance characteristics. (a) Typical data retention characteristics of our Al/Cu/Al2O3/TiN CBRAM device. The thickness of Al2O3 layer is 10 nm. (b) Read endurance characteristics of the Cu pillars in a Al/Cu/Al2O3/TiN structure at high CC of 70 mA. The stronger Cu pillars are obtained when the bias is positive.Back to article page