Figure 1From: Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μmSchematic diagram of (a) THH-VCSOA structure and its contact configuration and (b) potential distributions along p-channel and n-channel. In the region of Vp > Vn, the device is forward biased, while in the region of Vn > Vp, the device is reverse biased.Back to article page