Figure 3From: Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μmEL spectra of bidirectional THH-VCSOA-based GaInNAs/GaAs structures at different temperatures. The inset shows the temperature dependence of the peak energy (filled squares) compared with the Varshni equation (dotted lines).Back to article page