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Figure 2 | Nanoscale Research Letters

Figure 2

From: High Mg effective incorporation in Al-rich Al x Ga1 - xN by periodic repetition of ultimate V/III ratio conditions

Figure 2

Formation enthalpy difference of Mg Ga /Mg Al and C Mg profile of Al 0.49 Ga 0.51 N film. (a) Formation enthalpy difference of MgGa and MgAl between Ga-rich and N-rich condition. (b) CMg profile of Al0.49Ga0.51N film with three different Cp2Mg flows grown by the MSE technique. The inset in (b) illustrates the source supply sequence of the MSE technique, an ultimate V/III ratio condition is shortly produced during the interruption.

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