Figure 1From: Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHzSEM image of highly porous Si. SEM image of highly porous Si formed on p + Si with resistivity 1 to 5 mΩ.cm. It depicts the vertical pores with dendrite structure of the material. Pore size is between 9 and 12 nm.Back to article page