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Figure 4 | Nanoscale Research Letters

Figure 4

From: Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Figure 4

Dielectric permittivity of porous Si as a function of porosity. Full black dots: extracted values of the dielectric permittivity ε PSi of porous Si from measurements of CPW TLines. Open squares: results using Vegard’s model for unoxidized porous Si. Open circles: results using Maxwell-Garnett’s model for unoxidized porous Si. Open triangles: results using Bruggeman’s model for unoxidized Si. Open rhombi: results using Vegard’s model for oxidized porous Si.

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