Table 1 IR vibration bands[12–17] of the SiO x films before and after thermal annealing
From: Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD
Vibration mode | Peak position (cm-1) | |||||
|---|---|---|---|---|---|---|
As grown | Annealed | |||||
1,150°C | 1,020°C | 900°C | 1,150°C | 1,020°C | 900°C | |
Si-O rocking | 444 | 436 | 429 | 458 | 458 | 458 |
Si-O bending | 797 | 800 | 810 | 812 | 812 | 812 |
Si-O stretching | 1,064 | 1,055 | 1,048 | 1,082 | 1,082 | 1,082 |
Si-H wagging | 654 | 649 | 645 | 645 | 645 | - |
Si-H bending | 885 | 879 | 875 | - | - | - |