Table 2 IR vibration bands[12–17] of the (SiO x /SiO y ) junctions before and after thermal annealing
From: Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD
Vibration mode | Peak position (cm-1) | ||||||
|---|---|---|---|---|---|---|---|
1,150°C/1020°C | 1,150°C/900°C | 1,020°C/1,150°C | 1,020°C/900°C | 900°C/1,150°C | 900°C/1,020°C | ||
As grown | Si-O rocking | 447 | 444 | 442 | 442 | 440 | 440 |
Si-O bending | 808 | 803 | 800 | 800 | 797 | 796 | |
Si-O stretching | 1,067 | 1,063 | 1,063 | 1,055 | 1,055 | 1,054 | |
Si-H wagging | 664 | 659 | 645 | - | 652 | 651 | |
Si-H bending | 883 | 883 | 880 | 879 | 879 | 877 | |
Annealed | Si-O rocking | 458 | 458 | 458 | 458 | 458 | 458 |
Si-O bending | 812 | 812 | 812 | 812 | 812 | 812 | |
Si-O stretching | 1,082 | 1,082 | 1,082 | 1,082 | 1,082 | 1,082 | |
Si-H wagging | 645 | 640 | - | 637 | - | - | |
Si-H bending | - | - | - | - | - | - | |