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Table 3 Theoretical and experimental values

From: Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

Tg (°C)

Gap E N of Si-nc (eV)

Diameter of Si-nc (nm)

Diameter of Si-nc (nm) by HRTEM [[7]]

1,150

1.67

3.96

5.5

1,020

1.89

3.11

4

900

2.28

2.31

2.5

  1. Values of the E N and the diameter of Si-nc calculated from the PL spectra of the SiO x films as-grown as a function of the Tg.

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