Account

Table 4 Defect types[19–24] linked with the peak position

From: Compositional and optical properties of SiO_x films and (SiO_x/SiO_y) junctions deposited by HFCVD

Defect type	Peak position (nm)
	As grown
	1,150°C	1,020°C	900°C
WOB	400	410
NOV defect			436
E'δ defect	-	540	543
NBOHC	-	-	658
None identified	739	758	-

Position obtained by deconvolution from PL spectra of the SiO_x films as function of the Tg.

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