Table 5 Defect types linked[19–24] with the peak position
From: Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD
Defect type | Peak position (nm) | |||||
|---|---|---|---|---|---|---|
As grown | ||||||
1,150/1,020°C | 1,150/900°C | 1,020/1,150°C | 1,020/900°C | 900/1,150°C | 900/1,020°C | |
WOB | - | - | - | 408 | 406 | 414 |
NOV defect | 449 | 438 | 432 | - | - | - |
E'δ defect | 532 | 534 | - | 559 | 542 | 514 |
NBOHC | 648 | 622 | 667 | 674 | 672 | 644 |
None identified | 805 | 782 | 795 | 789 | 770 | 780 |