Figure 1From: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layersA schematic of the conventional AlGaN/GaN HEMT. For structure A, a 10-nm-thick EBL with p-type polarity (p = 1 × 1018 cm−2) was inserted. For structure B and structure C, the original 10-nm-thick GaN EBL was replaced with Al0.1Ga0.9N EBL and Al0.1Ga0.9N/GaN/Al0.1Ga0.9N QW EBL, respectively.Back to article page