Figure 3From: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layersDC transfer characteristics and subthreshold drain leakage versus drain voltage plots. (a) Transfer characteristics (Ids vs. Vg) for all devices with a drain voltage of Vds = 30 V. (b) Subthreshold drain leakage current as a function of drain bias for all devices under a closed-gate condition of Vg = −5 V.Back to article page