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Figure 4 | Nanoscale Research Letters

Figure 4

From: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Figure 4

Cross sections of the electron concentration distribution at a closed-gate condition and cross-sectional potential profiles. (a) Ne distributions in all devices at a closed-gate condition of Vg = −5 V and Vds = 80 V. (b) Cross-sectional potential profiles for all devices, where Vg = −5 V, Vds = 20 V (black line), Vds = 40 V (red line), and Vds = 60 V (blue line). The EBL region is marked by the light-blue rectangle.

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