Figure 6
Breakdown voltage versus GaN thickness and dependence of aluminum composition on breakdown voltage. (a) HEMT's breakdown voltage versus the GaN thickness of QW EBL, where the barrier layer of QW EBL is Al0.1Ga0.9N and the total thickness of QW EBL is set to 10 nm. (b) Dependence of aluminum composition of QW EBL on the HEMT's breakdown voltage, where the GaN thickness of QW EBL is set to 6 nm and the total thickness of QW EBL is again fixed to 10 nm.