Figure 4From: ZnO-porous silicon nanocomposite for possible memristive device fabricationCurrent-voltage ( I - V ) characterization. (a) Schematic of lateral (A) and transversal (B) measurements for the same sample. (b) ZnO over crystalline Si before and after annealing. (c) ZnO-mesoPS composite after annealing. Left- and right-hand side figures correspond to the configurations A (lateral) and B (transversal), respectively.Back to article page