Figure 7From: Forming-free bipolar resistive switching in nonstoichiometric ceria filmsRetention characteristic and nondestructive readout properties. (a) Retention characteristic of the Zr/CeO x /Pt device. The resistance ratios between HRS/LRS are retained for more than 104 s. (b) Nondestructive readout properties of both HRS and LRS for 104 s.Back to article page